每NPN功率硅开关晶体管合格MIL -PRF- 455分之19500 NPN POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/455
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
艾睿:
The three terminals of this NPN 2N5666 GP BJT from Microsemi give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. It has a maximum collector emitter voltage of 200 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.
Verical:
Trans GP BJT NPN 200V 5A 1200mW 3-Pin TO-5 Bag
| 型号 | 品牌 | 下载 |
|---|---|---|
| 2N5666 | Microsemi 美高森美 | 下载 |
| 2N5657G | ON Semiconductor 安森美 | 下载 |
| 2N5639_D26Z | Fairchild 飞兆/仙童 | 下载 |
| 2N5639_D75Z | Fairchild 飞兆/仙童 | 下载 |
| 2N5638 | Fairchild 飞兆/仙童 | 下载 |
| 2N5639 | Fairchild 飞兆/仙童 | 下载 |
| 2N5638RLRA | ON Semiconductor 安森美 | 下载 |
| 2N5638RLRAG | ON Semiconductor 安森美 | 下载 |
| 2N5639G | ON Semiconductor 安森美 | 下载 |
| 2N5639RLRAG | ON Semiconductor 安森美 | 下载 |
| 2N5638_D26Z | Fairchild 飞兆/仙童 | 下载 |