MPSA92RLRMG

ON SEMICONDUCTOR  MPSA92RLRMG  双极性晶体管, PNP -300V TO-92

Bipolar BJT Transistor PNP 300V 500mA 50MHz 625mW Through Hole TO-92-3

得捷:
TRANS PNP 300V 0.5A TO92

贸泽:
Bipolar Transistors - BJT 500mA 300V PNP

e络盟:
双极性晶体管, PNP -300V TO-92

艾睿:
This specially engineered PNP MPSA92RLRMG GP BJT from ON Semiconductor comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V.

Chip1Stop:
Trans GP BJT PNP 300V 0.5A 3-Pin TO-92 Ammo

Verical:
Trans GP BJT PNP 300V 0.5A 625mW 3-Pin TO-92 Fan-Fold