SUD19N20-90-E3

VISHAY  SUD19N20-90-E3  晶体管, MOSFET, N沟道, 19 A, 200 V, 90 mohm, 10 V, 4 V

The is a 200VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for primary side switch applications.

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100% Rg tested

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PWM optimized

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175°C Junction temperature

艾睿:
Trans MOSFET N-CH 200V 19A 3-Pin2+Tab DPAK

安富利:
Trans MOSFET N-CH 200V 19A 3-Pin2+Tab DPAK

富昌:
单 N 沟道 200 V 0.09 Ohms 表面贴装 功率 Mosfet - TO-252

Chip1Stop:
Trans MOSFET N-CH 200V 19A 3-Pin2+Tab DPAK

Verical:
Trans MOSFET N-CH 200V 19A 3-Pin2+Tab DPAK

Newark:
# VISHAY  SUD19N20-90-E3  MOSFET Transistor, N Channel, 19 A, 200 V, 90 mohm, 10 V, 4 V