IPD65R380C6ATMA1

INFINEON  IPD65R380C6ATMA1  功率场效应管, MOSFET, N沟道, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V

The IPD65R380C6 is a 650V CoolMOS™ C6 N-channel Power MOSFET features lower gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junctionSJ principle and pioneered by Technologies. The CoolMOS™ C6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

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Extremely low losses due to very low figure of merit RDS ON x Qg and EOSS

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Very high commutation ruggedness

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Easy to use

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Better light load efficiency

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Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness

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Better performance in comparison to previous CoolMOS™ generations

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More efficient, more compact, lighter and cooler

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Improved power density

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Improved reliability

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General purpose part can be used in both soft and hard switching topologies

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Improved efficiency in hard switching applications

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Reduces possible ringing due to PCB layout and package parasitic effects

For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.