IGB15N60TATMA1

INFINEON  IGB15N60TATMA1  单晶体管, IGBT, 15 A, 2.05 V, 130 W, 600 V, TO-263, 3 引脚

The IGB15N60T is a Low Loss IGBT in TRENCHSTOP™ and field-stop technology. The TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of Trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

.

Lowest Vce sat drop for lower conduction losses

.

Low switching losses

.

Easy parallel switching capability due to positive temperature coefficient in Vce sat

.

Very soft and fast recovery anti-parallel emitter controlled diode

.

High ruggedness, temperature stable behaviour

.

Low EMI emissions

.

Low gate charge

.

Very tight parameter distribution

.

Highest efficiency - Low conduction and switching losses

.

High device reliability

.

5µs Short-circuit withstand time

.

Green product

.

Halogen-free