功率半导体功率模块 Power Semiconductors Power Modules
This IGBT transistor from is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 536000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT75GN60BG | Microsemi 美高森美 | 下载 |
| APT75GN60B2DQ3G | Microsemi 美高森美 | 下载 |
| APT75GN120J | Microsemi 美高森美 | 下载 |
| APT75GN120JDQ3G | Microsemi 美高森美 | 下载 |
| APT75DQ60BG | Microsemi 美高森美 | 下载 |
| APT75DQ120BG | Microsemi 美高森美 | 下载 |
| APT7F80K | Microsemi 美高森美 | 下载 |
| APT75DQ100BG | Microsemi 美高森美 | 下载 |
| APT7F120B | Microsemi 美高森美 | 下载 |
| APT7F100B | Microsemi 美高森美 | 下载 |
| APT7M120B | Microsemi 美高森美 | 下载 |