功率半导体功率模块 Power Semiconductors Power Modules
This powerful and secure IGBT transistor from will make sure your circuit works properly. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 536000 mW. It is made in a single dual emitter configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT150GN60JDQ4 | Microsemi 美高森美 | 下载 |
| APT100GT120JU2 | Microsemi 美高森美 | 下载 |
| APT15GN120KG | Microsemi 美高森美 | 下载 |
| APT11GF120BRDQ1G | Microsemi 美高森美 | 下载 |
| APT15GT60KRG | Microsemi 美高森美 | 下载 |
| APT15D100KG | Microsemi 美高森美 | 下载 |
| APT15D60KG | Microsemi 美高森美 | 下载 |
| APT15DQ100KG | Microsemi 美高森美 | 下载 |
| APT15D60K | Microsemi 美高森美 | 下载 |
| APT15DQ120KG | Microsemi 美高森美 | 下载 |
| APT15DQ60BG | Microsemi 美高森美 | 下载 |