IPB65R110CFDAATMA1

晶体管, MOSFET, N沟道, 31.2 A, 650 V, 0.099 ohm, 10 V, 4 V

Summary of Features:

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First 650V automotive qualified technology with integrated fast body diode on the market

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Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt

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Low gate charge value Q g

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Low Q rr at repetitive commutation on body diode & lowQ oss

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Reduced turn on and turn of delay times

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Compliant to AEC Q101 standard

Benefits:

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Increased safety margin due to higher breakdown voltage

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Reduced EMI appearance and easy to design in

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Better light load efficiency

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Lower switching losses

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Higher switching frequency and/or higher duty cycle possible

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High quality and reliability