JAN2N2945A

PNP硅小信号晶体管 PNP SILICON SMALL SIGNAL TRANSISTOR

This 2N2944A through 2N2946A PNP silicon transistor device is military qualified up to a JANTXV level for high-reliability applications. also offers numerous other products to meet higher and lower power voltage regulation applications.

艾睿:
The PNP JAN2N2945A general purpose bipolar junction transistor, developed by Microsemi, is the perfect solution for your high-current density needs. This bipolar junction transistor&s;s maximum emitter base voltage is 25 V. Its maximum power dissipation is 400 mW. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 25 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C.

Verical:
Trans GP BJT PNP 20V 0.1A 400mW 3-Pin TO-46 Bag