IXGH24N170

IGBT 分立，IXYS### IGBT 分立元件和模块，IXYS绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备，以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中，将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。

IGBT 分立，IXYS

得捷:
IGBT 1700V 50A 250W TO247AD

欧时:
IXYS IXGH24N170 N沟道 IGBT, Vce=1700 V, 50 A, 3引脚 TO-247AD封装

e络盟:
单晶体管, IGBT, 50 A, 2.5 V, 250 W, 1.7 kV, TO-247, 3 引脚

艾睿:
Use the IXGH24N170 IGBT transistor from Ixys Corporation as an electronic switch. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 250000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Chip1Stop:
Trans IGBT Chip N-CH 1.7KV 50A 3-Pin3+Tab TO-247AD

Verical:
Trans IGBT Chip N-CH 1700V 50A 250000mW 3-Pin3+Tab TO-247AD

Newark:
# IXYS SEMICONDUCTOR  IXGH24N170  IGBT, SINGLE, N-CH, 1.7KV, 50A, TO-247 New