Trans MOSFET N-CH 55V 5.1A 8Pin SOIC
Description
These HEXFET ® Power MOSFET’s in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFET’s are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Benefits
• Advanced Process Technology
• Dual N-Channel MOSFET
• Ultra Low On-Resistance
• 175°C Operating Temperature
• Repetitive Avalanche Allowed up to Tjmax
• Lead-Free
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