VB20120SG-E3/4W数据手册PDF_VB20120SG-E3/4W中文资料-锐单商城

VB20120SG-E3/4W概述

高压Trench MOS势垒肖特基整流器超低VF = 0.54 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

Ultra Low VF= 0.54 V at IF= 5 A

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for TO-263AB package

• Solder bath temperature 275 °C maximum, 10 s,per JESD 22-B106 for TO-220AB, ITO-220AB, and TO-262AA package

• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

得捷:
DIODE SCHOTTKY 120V 20A TO263AB

艾睿:
Diode Schottky 120V 20A 3-Pin2+Tab TO-263AB Tube

VB20120SG-E3/4W数据文档