STGWA19NC60HD 系列 600 V 52 A 极快速 IGBT 带超快恢复二极管 - TO-247
The IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 208000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGWA19NC60HD | ST Microelectronics 意法半导体 | 下载 |
| STGW20H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGW35HF60W | ST Microelectronics 意法半导体 | 下载 |
| STGWT30H65FB | ST Microelectronics 意法半导体 | 下载 |
| STGWT30H60DFB | ST Microelectronics 意法半导体 | 下载 |
| STGW19NC60W | ST Microelectronics 意法半导体 | 下载 |
| STGWT40H60DLFB | ST Microelectronics 意法半导体 | 下载 |
| STGWT40H65DFB | ST Microelectronics 意法半导体 | 下载 |
| STGW30H60DFB | ST Microelectronics 意法半导体 | 下载 |
| STGWT20H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGWT30V60F | ST Microelectronics 意法半导体 | 下载 |