STGF7H60DF 管装
The IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 24000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This device is made with field stop|trench technology. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| STGF7H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGF7NB60SL | ST Microelectronics 意法半导体 | 下载 |
| STGFW30V60DF | ST Microelectronics 意法半导体 | 下载 |
| STGF35HF60W | ST Microelectronics 意法半导体 | 下载 |
| STGFW20V60DF | ST Microelectronics 意法半导体 | 下载 |
| STGF20H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGF20NB60S | ST Microelectronics 意法半导体 | 下载 |
| STGF30H60DF | ST Microelectronics 意法半导体 | 下载 |
| STGFW30V60F | ST Microelectronics 意法半导体 | 下载 |
| STGF19NC60HD | ST Microelectronics 意法半导体 | 下载 |
| STGFW20H65FB | ST Microelectronics 意法半导体 | 下载 |