IXGA30N120B3

IXYS SEMICONDUCTOR  IXGA30N120B3  单晶体管, IGBT, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263, 3 引脚

The is a GenX3™ IGBT for use with 3 to 20kHz switching applications. It is optimized for low conduction and switching losses. It features high power density and low gate drive requirement.

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Square RBSOA

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High-speed low-Vsat PT

得捷:
IGBT 1200V 60A 300W TO263

贸泽:
IGBT Transistors GenX3 1200V IGBT

e络盟:
单晶体管, IGBT, 60 A, 3.5 V, 300 W, 1.2 kV, TO-263 D2PAK, 3 引脚

艾睿:
Trans IGBT Chip N-CH 1200V 60A 300000mW 3-Pin2+Tab TO-263AA

Newark:
# IXYS SEMICONDUCTOR  IXGA30N120B3  IGBT Single Transistor, 60 A, 2.96 V, 300 W, 1.2 kV, TO-263, 3 Pins

DeviceMart:
IGBT PT 1200V 30A TO-263

Win Source:
IGBT 1200V 60A 300W TO263 / IGBT PT 1200 V 60 A 300 W Surface Mount TO-263AA