BSP250数据手册PDF_BSP250中文资料-锐单商城

BSP250概述

NXP BSP250 晶体管, MOSFET, P沟道, -3 A, -30 V, 0.22 ohm, -10 V, -1 V

最大源漏极电压VdsDrain-Source Voltage| -300V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 20V 最大漏极电流IdDrain Current| -3A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.25Ω @-1A,-10V 开启电压Vgs（th）Gate-Source Threshold Voltage| -1.--2.8V 耗散功率PdPower Dissipation| 5W Description & Applications| FEATURES • High-speed switching • No secondary breakdown • Very low on-resistance. 描述与应用| •高速开关 •无二次击穿 •非常低的导通电阻