FDG6313N

FDG6313N 复合场效应管 25V 500mA/0.5A SOT-363/SC70-6 marking/标记 33h

最大源漏极电压VdsDrain-Source Voltage| 25V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 8V 最大漏极电流IdDrain Current| 500mA/0.5A 源漏极导通电阻RdsDrain-Source On-State Resistance| 0.6Ω@ VGS = 2.7V, ID =200mA 开启电压Vgs（th）Gate-Source Threshold Voltage| 0.65~1.5V 耗散功率PdPower Dissipation| 300mW/0.3W Description & Applications| P-Channel 2.5V Specified Power Trench MOSFET General Description These dual N-Channel logic level enhancement mode field effect transistors are produced using "s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Features Very low level gate drive requirements allowing direct operation in 3 V circuits Compact industry standard SC70-6 surface mount package. 描述与应用| P沟道2.5V额定功率沟道MOSFET 概述 这些双N沟道逻辑电平增强模式场效应都采用飞兆半导体专有的，高细胞密度，DMOS技术生产。这非常高密度的过程特别是针对减少通态电阻。该器件设计，尤其是作为一个替代双极数字晶体管和小信号MOSFET的低电压应用。 特点 非常低的水平栅极驱动要求可直接操作3 V电路 紧凑型工业标准SC70-6表面贴装封装。