STL20DN10F7

STL20DN10F7概述

N-沟道 100 V 5 A 67 mOhm STripFET VII DeepGATE 功率 Mosfet - PFLAT5x6

Mosfet Array 2 N-Channel Dual 100V 20A 62.5W Surface Mount PowerFlat™ 5x6


得捷:
MOSFET 2N-CH 100V 20A PWRFLAT56


贸泽:
MOSFET Dual N-channel 100 V, 0.065 Ohm typ., 5 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 double island


艾睿:
Looking for a component that can both amplify and switch between signals within your circuit? The STL20DN10F7 power MOSFET from STMicroelectronics provides the solution. Its maximum power dissipation is 62500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This device is made with stripfet technology. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.


安富利:
Trans MOSFET N-CH 100V 20A 8-Pin PowerFLAT T/R


富昌:
N-Channel 100 V 5 A 67 mOhm STripFET VII DeepGATE Power Mosfet - PFLAT5x6


Chip1Stop:
Trans MOSFET N-CH 100V 20A 8-Pin Power Flat T/R


Verical:
Trans MOSFET N-CH 100V 20A 8-Pin Power Flat T/R


STL20DN10F7数据文档
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