N - 沟道增强模式快速功率MOS晶体管 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
DESCRIPTION
This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDSon and gate charge, unequalled ruggedness and superior switching performance.
■ TYPICAL RDSon = 3.5 Ω
■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW INTRINSIC CAPACITANCES
■ GATE GHARGE MINIMIZED
■ REDUCED THRESHOLD VOLTAGE SPREAD
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES SMPS
■ DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
| 型号 | 品牌 | 下载 |
|---|---|---|
| STP3NA80 | ST Microelectronics 意法半导体 | 下载 |
| STP30NM50N | ST Microelectronics 意法半导体 | 下载 |
| STP30NM60N | ST Microelectronics 意法半导体 | 下载 |
| STP30NM30N | ST Microelectronics 意法半导体 | 下载 |
| STP3NB100 | ST Microelectronics 意法半导体 | 下载 |
| STP30N20 | ST Microelectronics 意法半导体 | 下载 |
| STP30NF10 | ST Microelectronics 意法半导体 | 下载 |
| STP36NF06FP | ST Microelectronics 意法半导体 | 下载 |
| STP38N65M5 | ST Microelectronics 意法半导体 | 下载 |
| STP34NM60N | ST Microelectronics 意法半导体 | 下载 |
| STP3N150 | ST Microelectronics 意法半导体 | 下载 |