ZXTN25100DGTA

双极晶体管 - 双极结型晶体管BJT NPN 100V HIGH GAIN

ZXTN25100 Series NPN 5.3 W 100 V 3 A SMT General Purpose Transistor - SOT-223

得捷:
TRANS NPN 100V 3A SOT223-3

立创商城:
NPN 100V 3A

贸泽:
双极晶体管 - 双极结型晶体管BJT NPN 100V HIGH GAIN

艾睿:
This specially engineered NPN ZXTN25100DGTA GP BJT from Diodes Zetex comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 5300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Allied Electronics:
100V NPN High Gain Transistor SOT-223

安富利:
Trans GP BJT NPN 100V 3A 4-Pin3+Tab SOT-223 T/R

Chip1Stop:
Trans GP BJT NPN 100V 3A 4-Pin3+Tab SOT-223 T/R

Verical:
Trans GP BJT NPN 100V 3A Automotive 4-Pin3+Tab SOT-223 T/R

Win Source:
TRANS NPN 100V 3A SOT223

DeviceMart:
TRANS NPN HI GAIN 100V SOT223