通用晶体管NPN硅 General Purpose Transistor NPN Silicon
Use this versatile NPN GP BJT from to design various electronic circuits. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 625 mW. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 5 V.
| 型号 | 品牌 | 下载 |
|---|---|---|
| MPS5172RLRMG | ON Semiconductor 安森美 | 下载 |
| MPS5179_D27Z | Fairchild 飞兆/仙童 | 下载 |
| MPS5179_D75Z | Fairchild 飞兆/仙童 | 下载 |
| MPS5179 | Fairchild 飞兆/仙童 | 下载 |
| MPS5179_D26Z | Fairchild 飞兆/仙童 | 下载 |
| MPS5179G | ON Semiconductor 安森美 | 下载 |
| MPS5172G | ON Semiconductor 安森美 | 下载 |
| MPS5172 | ON Semiconductor 安森美 | 下载 |
| MPS5172RLRM | ON Semiconductor 安森美 | 下载 |
| MPS588-C | Panduit 泛达 | 下载 |
| MPS5179RLRP | ON Semiconductor 安森美 | 下载 |