RF功率晶体管， LDMOST塑料系列N沟道增强模式横向的MOSFET RF power transistor, LDMOST plastic family N-channel enhancement-mode lateral MOSFETs
Need a MOSFET that will work in radio frequency environments? This RF amplifier made from STMicroelectronics is perfect for switching and amplifying electronic signals. Its maximum power dissipation is 95000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 165 °C. This N channel RF power MOSFET operates in enhancement mode. Its maximum frequency is 1000 MHz.
| 型号 | 品牌 | 下载 |
|---|---|---|
| PD84010S-E | ST Microelectronics 意法半导体 | 下载 |
| PD84006L-E | ST Microelectronics 意法半导体 | 下载 |
| PD84001 | ST Microelectronics 意法半导体 | 下载 |
| PD84006-E | ST Microelectronics 意法半导体 | 下载 |
| PD84002 | ST Microelectronics 意法半导体 | 下载 |
| PD84008L-E | ST Microelectronics 意法半导体 | 下载 |
| PD84008-E | ST Microelectronics 意法半导体 | 下载 |
| PD84010TR-E | ST Microelectronics 意法半导体 | 下载 |
| PD84010-E | ST Microelectronics 意法半导体 | 下载 |
| PD84008S-E | ST Microelectronics 意法半导体 | 下载 |