MUN5215DW1T1G

ON SEMICONDUCTOR  MUN5215DW1T1G  晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, SOT-363

通用 NPN ，最大 1A，On Semiconductor

### 标准

带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。

得捷:
TRANS 2NPN PREBIAS 0.25W SOT363

欧时:
### 通用 NPN 晶体管，最大 1A，On Semiconductor### 标准带 S 或 NSV 前缀的制造商部件号具有汽车资格，符合 AEC-Q101 标准。### 双极性晶体管，On SemiconductorON Semiconductor 的各种双极晶体管，包括以下类别：小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管

立创商城:
双 NPN 双极数字晶体管 BRT

e络盟:
晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 10 kohm

艾睿:
In contrast to traditional transistors, ON Semiconductor&s;s NPN MUN5215DW1T1G digital transistor&s;s can be used in a wide variety of digital signal processing circuits. This product&s;s maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 160@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@1mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 385 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a dual configuration.

Allied Electronics:
ON Semi MUN5215DW1T1G Dual NPN Bipolar Transistor; 0.1 A; 50 V; 6-Pin SOT-363

安富利:
Trans Digital BJT NPN 50V 100mA 6-Pin SOT-363 T/R

Chip1Stop:
Trans Digital BJT NPN 50V 100mA 385mW Automotive 6-Pin SC-88 T/R

Verical:
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SC-88 T/R

Newark:
# ON SEMICONDUCTOR  MUN5215DW1T1G  Bipolar Pre-Biased / Digital Transistor, BRT, 50 V, 100 mA, 10 kohm, SOT-363

Win Source:
TRANS 2NPN PREBIAS 0.25W SOT363