600V,20A高速沟槽栅场终止IGBT
Use the IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 100000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
型号 | 品牌 | 下载 |
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STGP20H60DF | ST Microelectronics 意法半导体 | 下载 |
STGP10NC60HD | ST Microelectronics 意法半导体 | 下载 |
STGP3NC120HD | ST Microelectronics 意法半导体 | 下载 |
STGP30NC60W | ST Microelectronics 意法半导体 | 下载 |
STGP7NC60H | ST Microelectronics 意法半导体 | 下载 |
STGP30H65F | ST Microelectronics 意法半导体 | 下载 |
STGP35HF60W | ST Microelectronics 意法半导体 | 下载 |
STGP30H60DF | ST Microelectronics 意法半导体 | 下载 |
STGP35N35LZ | ST Microelectronics 意法半导体 | 下载 |
STGP19NC60HD | ST Microelectronics 意法半导体 | 下载 |
STGP40V60F | ST Microelectronics 意法半导体 | 下载 |