迅雷高速NPT IGBT与反并联二极管DQ Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
The IGBT transistor from is the best electronic switch for fast switching. Its maximum power dissipation is 415000 mW. It has a maximum collector emitter voltage of 600 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT50GS60BRDQ2G | Microsemi 美高森美 | 下载 |
| APT50GT120JRDQ2 | Microsemi 美高森美 | 下载 |
| APT5F100K | Microsemi 美高森美 | 下载 |
| APT50GN60BG | Microsemi 美高森美 | 下载 |
| APT50GT60BRG | Microsemi 美高森美 | 下载 |
| APT50GT60BRDQ2G | Microsemi 美高森美 | 下载 |
| APT54GA60B | Microsemi 美高森美 | 下载 |
| APT50GS60BRG | Microsemi 美高森美 | 下载 |
| APT54GA60BD30 | Microsemi 美高森美 | 下载 |
| APT53N60BC6 | Microsemi 美高森美 | 下载 |
| APT5024BLLG | Microsemi 美高森美 | 下载 |