3SK166A MESFET-N沟道 8V -1V -- -4V SOT-143 marking/标记 KA 高频应用/低电压
Description
The is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to
the optimal design of input impedance.
Features
• Low voltage operation
• Low noise: NF = 1.2dB typ. at 800MHz
• High gain: Ga = 20dB typ at 800MHz
• High stability