V30100SG-E3/4W数据手册PDF_V30100SG-E3/4W中文资料-锐单商城

V30100SG-E3/4W概述

高压Trench MOS势垒肖特基整流器超低VF = 0.437 V在IF = 5 A High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.437 V at IF = 5 A

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C for TO-263AB package

• Solder dip 260 °C, 40 s for TO-220AB, ITO-220AB and TO-262AA package

• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.

V30100SG-E3/4W数据文档