DF200R12W1H3F_B11数据手册PDF_DF200R12W1H3F_B11中文资料-锐单商城

DF200R12W1H3F_B11概述

Fast and solder-less assembly is possible using our EasyPACK™ 1B 1200V booster IGBT modules with the proven PressFIT technology and High Speed IGBT H3.

Summary of Features:

.: High Speed IGBT H3

.: Low Switching Losses

.: CoolSiC™ Schottky diode 1200V

.: Fast Silicon diode 1200V

.: Al2O3 Substrate with Low Thermal Resistance

.: Integrated NTC temperature sensor

.: PressFIT Contact Technology

Benefits:

.: Compact module concept

.: Optimized customer’s development cycle time and cost

.: Configuration flexibility

DF200R12W1H3F_B11详细参数

DF200R12W1H3F_B11数据文档

型号	品牌	下载
DF200R12W1H3F_B11	Infineon 英飞凌	下载
DF20BA1-18.432MHZ-T	MMD Components	下载
DF2005S-G	Comchip Technology 上华科技	下载
DF204ST-G	Comchip Technology 上华科技	下载
DF206ST-G	Comchip Technology 上华科技	下载
DF20A-50DS-1C	Hirose Electric 广濑	下载
DF20BA1-24.576MHZ-T	MMD Components	下载
DF20BA1-14.31818MHZ-T	MMD Components	下载
DF20F-2830SCFA44	Hirose Electric 广濑	下载
DF20F-3032SCFA44	Hirose Electric 广濑	下载
DF20F-2830SCFA41	Hirose Electric 广濑	下载