BCW61DE6327HTSA1

Infineon BCW61DE6327HTSA1 , PNP 晶体管, 100 mA, Vce=32 V, HFE:100, 250 MHz, 3引脚 SOT-23封装

通用 PNP ，

得捷:
TRANS PNP 32V 0.1A SOT-23

欧时:
Infineon BCW61DE6327HTSA1 , PNP 晶体管, 100 mA, Vce=32 V, HFE:100, 250 MHz, 3引脚 SOT-23封装

贸泽:
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR

艾睿:
Implement this versatile PNP BCW61DE6327HTSA1 GP BJT from Infineon Technologies into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor&s;s maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 32 V and a maximum emitter base voltage of 5 V.

Chip1Stop:
Trans GP BJT PNP 32V 0.1A Automotive 3-Pin SOT-23 T/R

Verical:
Trans GP BJT PNP 32V 0.1A 330mW Automotive 3-Pin SOT-23 T/R

Win Source:
TRANS PNP 32V 0.1A SOT-23