MJW21196

MJW21196概述

硅功率晶体管 Silicon Power Transistors

MJW21195 PNP

NPN

The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

Features

•Total Harmonic Distortion Characterized

•High DC Current Gain −hFE= 20 Min @ IC= 8 Adc

•Excellent Gain Linearity

•High SOA: 2.25 A, 80 V, 1 Second

•Pb−Free Packages are Available
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MJW21196数据文档
型号 品牌 下载
MJW21196

ON Semiconductor 安森美

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MJW21192G

ON Semiconductor 安森美

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MJW21193G

ON Semiconductor 安森美

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MJW21191

ON Semiconductor 安森美

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MJW21195G

ON Semiconductor 安森美

下载
MJW21194G

ON Semiconductor 安森美

下载
MJW21196G

ON Semiconductor 安森美

下载
MJW21195

ON Semiconductor 安森美

下载
MJW21194

ON Semiconductor 安森美

下载
MJW21191G

ON Semiconductor 安森美

下载
MJW21193

ON Semiconductor 安森美

下载

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