BC327-25RL1G

BC327-25RL1G概述

ON SEMICONDUCTOR  BC327-25RL1G  双极晶体管

Implement this versatile PNP GP BJT from into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 1500 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

BC327-25RL1G数据文档
型号 品牌 下载
BC327-25RL1G

ON Semiconductor 安森美

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BC32725TA

Fairchild 飞兆/仙童

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BC327BU

Fairchild 飞兆/仙童

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BC327-40-AP

Micro Commercial Components 美微科

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BC327-16-AP

Micro Commercial Components 美微科

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BC32725BU

Fairchild 飞兆/仙童

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BC32716BU

Fairchild 飞兆/仙童

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BC32716TA

Fairchild 飞兆/仙童

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BC32716TAR

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BC32716TFR

Fairchild 飞兆/仙童

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BC32725TAR

Fairchild 飞兆/仙童

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