APT85GR120J 单 1200 V 116 A 543 W NPT IGBT - TO-227-4
This infineon IGBT module from will handle large currents with little seepage. Its maximum power dissipation is 595000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This device is made with npt technology. This IGBT driver board has a minimum operating temperature of -55 °C and a maximum of 150 °C.
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