高速PT IGBT High Speed PT IGBT
This powerful and secure IGBT transistor from will make sure your circuit works properly. It has a maximum collector emitter voltage of 900 V. Its maximum power dissipation is 290000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT35GA90B | Microsemi 美高森美 | 下载 |
| APT30GT60KRG | Microsemi 美高森美 | 下载 |
| APT30DQ60KG | Microsemi 美高森美 | 下载 |
| APT30DQ100KG | Microsemi 美高森美 | 下载 |
| APT30D60BG | Microsemi 美高森美 | 下载 |
| APT30DQ60BG | Microsemi 美高森美 | 下载 |
| APT30DQ120KG | Microsemi 美高森美 | 下载 |
| APT30DQ100BG | Microsemi 美高森美 | 下载 |
| APT30D40B | Microsemi 美高森美 | 下载 |
| APT30S20BCTG | Microsemi 美高森美 | 下载 |
| APT30S20BG | Microsemi 美高森美 | 下载 |