UPA1900TE

UPA1900TE N沟道MOSFET 20V 5.5A SOT-163/SOT23-6/TSOP-6 marking/标记 TG 高速开关/低导通电阻

最大源漏极电压Vds Drain-Source Voltage| 20V \---|--- 最大栅源极电压Vgs± Gate-Source Voltage| 12V 最大漏极电流Id Drain Current| 5.5A 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 0.035Ω/Ohm @3A,4.5V 开启电压Vgs（th） Gate-Source Threshold Voltage| 0.5-1.5V 耗散功率Pd Power Dissipation| 200mW/0.2W Description & Applications| MOS FIELD EFFECT TRANSISTOR DESCRIPTION The µPA1900 is a switching device which can be driven directly by a 2.5 V power source. The µPA1900 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. FEATURES • Can be driven by a 2.5 V power source • Low on-state resistance RDSon1 = 35 mΩ MAX. VGS = 4.5 V, ID = 3.0 A RDSon2 = 38 mΩ MAX. VGS = 4.0 V, ID = 3.0 A RDSon3 = 45 mΩ MAX. VGS = 2.5 V, ID = 3.0 A 描述与应用| MOS场效应晶体管 说明 μPA1900是可驱动的开关装置直接由2.5 V电源。 μPA1900具有低通态电阻和优良的开关特性，是适合于的应用，如便携机的电源开关等 •可通过2.5 V电源驱动 •低通态电阻 RDS（上）1=35mΩ最大。 （VGS=4.5 V，ID= 3.0 A） 的RDS（on）=38mΩ最大。 （VGS=4.0 V，ID= 3.0 A） 的RDS（on）=45mΩ最大。 （VGS=2.5 V，ID= 3.0 A）