DXTP560BP5-13

DXTP560BP5-13概述

双极晶体管 - 双极结型晶体管BJT PNP - 500 -150mA IC VCEO - 500 ICM - 500

- 双极 BJT - 单 PNP 500 V 150 mA 60MHz 2.8 W 表面贴装型 PowerDI™ 5


立创商城:
PNP 500V 150mA


得捷:
TRANS PNP 500V 0.15A POWERDI5


贸泽:
双极晶体管 - 双极结型晶体管BJT PNP - 500 -150mA IC VCEO - 500 ICM - 500


艾睿:
If you require a general purpose BJT that can handle high voltages, then the PNP DXTP560BP5-13 BJT, developed by Diodes Zetex, is for you. This bipolar junction transistor&s;s maximum emitter base voltage is 7 V. Its maximum power dissipation is 2800 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 500 V and a maximum emitter base voltage of 7 V.


安富利:
Trans GP BJT PNP 500V 0.15A 3-Pin2+Tab PowerDI 5 T/R


Chip1Stop:
Trans GP BJT PNP 500V 0.15A 3-Pin2+Tab PowerDI 5 T/R


Verical:
Trans GP BJT PNP 500V 0.15A Automotive 3-Pin2+Tab PowerDI 5 T/R


儒卓力:
**PNP TRANSISTOR 500V 0,15A PDI5 **


DeviceMart:
TRANS PNP 500V POWERDI5


Win Source:
TRANS PNP 500V 0.15A POWERDI5


DXTP560BP5-13数据文档
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DXTP560BP5-13

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DXTP03200BP5-13

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DXTP19020DP5-13

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