IGBT 晶体管 G-SERIES A3/B3/C3 GENX3 IGBT 600V 90A
IXYS extends its GenX3™ insulated gate bipolar transistor IGBT product line to 600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3™ IGBT process and utilize IXYS’ advanced Punch-Though PT technology, tailored to provide higher surge current capabilities, lower saturation voltages, and lower switching losses.
得捷:
IGBT 600V 75A 660W TO247
贸泽:
IGBT 晶体管 G-SERIES A3/B3/C3 GENX3 IGBT 600V 90A
艾睿:
Trans IGBT Chip N-CH 600V 75A 660000mW 3-Pin3+Tab TO-247
Win Source:
IGBT 600V 75A 660W TO247
| 型号 | 品牌 | 下载 |
|---|---|---|
| IXGH90N60B3 | IXYS Semiconductor | 下载 |
| IXGH10N100AU1 | IXYS Semiconductor | 下载 |
| IXGH24N60B | IXYS Semiconductor | 下载 |
| IXGH30N60BD1 | IXYS Semiconductor | 下载 |
| IXGH24N60C | IXYS Semiconductor | 下载 |
| IXGH32N60C | IXYS Semiconductor | 下载 |
| IXGH32N60CD1 | IXYS Semiconductor | 下载 |
| IXGH50N60B | IXYS Semiconductor | 下载 |
| IXGH32N60B | IXYS Semiconductor | 下载 |
| IXGH24N60A | IXYS Semiconductor | 下载 |
| IXGH32N60BU1 | IXYS Semiconductor | 下载 |