STGFW30V60F

Trans IGBT Chip N-CH 600V 60A 58000mW 3Pin3+Tab TO-3pF Tube

IGBT 沟槽型场截止 通孔 TO-3PF

得捷:
IGBT 600V 60A 58W TO3PF

贸泽:
IGBT Transistors 600V 30A Hi Spd TrenchGate FieldStop

艾睿:
The STGFW30V60F IGBT transistor from STMicroelectronics is perfect to use as an electronic switch eliminating the current at the gate. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 58000 mW. In order to ensure parts aren&s;t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.

安富利:
Trans IGBT Chip N-CH 600V 60A 3-Pin TO-3PF Tube

Chip1Stop:
Trans IGBT Chip N-CH 600V 60A 3-Pin3+Tab TO-3PF Tube

Verical:
Trans IGBT Chip N-CH 600V 60A 58000mW 3-Pin3+Tab TO-3PF Tube