IPD26N06S2L35ATMA1

DPAK N-CH 55V 30A

表面贴装型 N 通道 30A（Tc） 68W（Tc） PG-TO252-3

得捷:
MOSFET N-CH 55V 30A TO252-3

艾睿:
As an alternative to traditional transistors, the IPD26N06S2L35ATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 68000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with optimos technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.

Verical:
Trans MOSFET N-CH 55V 30A Automotive 3-Pin2+Tab DPAK T/R