1N5419E3

1N5419E3概述

Diode Switching 500V 3A 2Pin Case E

DESCRIPTION

This “fast recovery” rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an internal “Category 1” metallurgical bond. These devices are also available in surface mount MELF package configurations. also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.

FEATURES

• Popular JEDEC registered 1N5415 thru 1N5420 series.

• Voidless hermetically sealed glass package.

• Quadruple-layer passivation.

• Internal “Category 1” metallurgical bonds.

• Working Peak Reverse Voltage 50 to 600 volts.

• JAN, JANTX, JANTXV and JANS qualifications available per MIL-PRF-19500/411.

• RoHS compliant versions available commercial grade only.

APPLICATIONS / BENEFITS

• Fast recovery 3 amp 50 to 600 volt rectifiers.

• Military and other high-reliability applications.

• General rectifier applications including bridges, half-bridges, catch diodes, etc.

• High forward surge current capability.

• Extremely robust construction.

• Low thermal resistance.

• Controlled avalanche with peak reverse power capability.

• Inherently radiation hard as described in Microsemi “MicroNote 050”.<

1N5419E3数据文档
型号 品牌 下载
1N5419E3

Microsemi 美高森美

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1N5401G

ON Semiconductor 安森美

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1N5401RLG

ON Semiconductor 安森美

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1N5408

Fairchild 飞兆/仙童

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1N5408-E3/54

Vishay Semiconductor 威世

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1N5406RLG

ON Semiconductor 安森美

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1N5406-E3/54

Vishay Semiconductor 威世

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1N5402G

ON Semiconductor 安森美

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1N5408G

ON Semiconductor 安森美

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1N5406G

ON Semiconductor 安森美

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1N5404G

ON Semiconductor 安森美

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