Trans IGBT Chip N-CH 600V 50A 40000mW 3Pin3+Tab TO-3PFM Tube
This IGBT transistor from Renesas will work perfectly in your circuit. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 40000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.
| 型号 | 品牌 | 下载 |
|---|---|---|
| RJP60F0DPM-00#T1 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP60F5DPK-01#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP60F0DPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP60D0DPE-00#J3 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP60D0DPP-M0#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP6085DPN-00#T2 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP60D0DPK-00#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP60V0DPM-00#T1 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP6085DPK-00#T0 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP60D0DPM-00#T1 | Renesas Electronics 瑞萨电子 | 下载 |
| RJP60F5DPM-00#T1 | Renesas Electronics 瑞萨电子 | 下载 |