A2T21S260-12SR3

RF Power Transistor,2110 to 2170MHz, 208W, Typ Gain in dB is 18.7 @ 2170MHz, 28V, LDMOS, SOT1785

Overview

The A2T21S260-12S 65 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.

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## Features

* Greater Negative Gate-Source Voltage Range for Improved Class C Operation

* Designed for Digital Predistortion Error Correction Systems

* Optimized for Doherty Applications

* RoHS Compliant

## Features RF Performance Table

### 2100 MHz

Typical Single-Carrier W-CDMA Performance: VDD = 28 Vdc, IDQ = 1200 mA, Pout = 65 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

.

*Frequency** | **Gps

dB

.

* | **ηD

%

.

* | **Output PAR

dB

.

* | **ACPR

dBc

.

* | **IRL

dB

.

*

\---|---|---|---|---|---

2110 MHz| 18.5| 30.4| 6.9| –32.6| –17

2140 MHz| 18.6| 30.3| 6.8| –32.8| –13

2170 MHz| 18.7| 30.6| 6.8| –32.0| –11