FAIRCHILD SEMICONDUCTOR NDS0610 晶体管, MOSFET, P沟道, 120 mA, -60 V, 10 ohm, -10 V, -1.7 V
最大源漏极电压VdsDrain-Source Voltage| -60V \---|--- 最大栅源极电压Vgs±Gate-Source Voltage| 20V 最大漏极电流IdDrain Current| -0.12A 源漏极导通电阻RdsDrain-Source On-State Resistance| 1.0Ω @-500mA,-10V 开启电压Vgs（th）Gate-Source Threshold Voltage| -1--3.5V 耗散功率PdPower Dissipation| 360mW/0.36W Description & Applications| Features • −0.12A, −60V. RDSON = 10 Ω @ VGS = −10 V RDSON = 20 Ω @ VGS = −4.5 V • Voltage controlled p-channel small signal switch • High density cell design for low RDSON • High saturation current 描述与应用| •电压控制p沟道小信号开关 •高密度电池设计的低RDS（ON） •高饱和电流“