FDN361BN

FAIRCHILD SEMICONDUCTOR  FDN361BN  晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.092 ohm, 10 V, 2.1 V

The is a N-channel Logic Level MOSFET produced using Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance. It is particularly suited for low voltage applications in PCMCIA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface-mount package. It comes with industry standard outline SOT-23 surface-mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities.

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Low gate charge

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High performance Trench technology for extremely low RDS ON