VISHAY SIR802DP-T1-GE3 晶体管, MOSFET, N沟道, 30 A, 20 V, 0.0041 ohm, 10 V, 600 mV
The is a 20VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for DC-to-DC converter, low voltage drive and POL applications.
| 型号 | 品牌 | 下载 |
|---|---|---|
| SIR802DP-T1-GE3 | Vishay Semiconductor 威世 | 下载 |
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