32Kx8 Nonvolatile SRAM, 3.3V Input, 10% Voltage Tolerance 28-DIP MODULE -40℃ to 85℃
GENERAL DESCRIPON
The CMOS bq4011/Y/LY is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the
unlimited write cycles of standard SRAM.
The control circuitry constantly monitors the single supply for an out-of-tolerance condition. When VCC falls out of tolerance, the SRAM is unconditionally write-protected to prevent an inadvertent write operation.
FEATURES
• Data Retention for at least 10 Years Without Power
• Automatic Write-Protection During Power-up/Power-down Cycles
• Conventional SRAM Operation, Including Unlimited Write Cycles
• Internal Isolation of Battery before Power Application
• 5-V or 3.3-V Operation
• Industry Standard28-Pin DIP Pinout
型号 | 品牌 | 下载 |
---|---|---|
BQ4011LYMA-70N | TI 德州仪器 | 下载 |
BQ40Z60EVM-578 | TI 德州仪器 | 下载 |
BQ40Z50EVM-561 | TI 德州仪器 | 下载 |
BQ4010YMA-150N | TI 德州仪器 | 下载 |
BQ4010MA-200 | TI 德州仪器 | 下载 |
BQ4011YMA-100 | TI 德州仪器 | 下载 |
BQ4011YMA-70N | TI 德州仪器 | 下载 |
BQ4011MA-100 | TI 德州仪器 | 下载 |
BQ4010YMA-150 | TI 德州仪器 | 下载 |
BQ4010YMA-85 | TI 德州仪器 | 下载 |
BQ4016MC-70 | TI 德州仪器 | 下载 |