氮化镓HEMT的SiC脉冲功率晶体管125W峰值， 960-1215兆赫， 128μs脉冲， 10 ％占空比 GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
RF Mosfet HEMT 50V 100mA 960MHz ~ 1.215GHz 18.9dB 125W
得捷:
TRANSISTOR GAN 125W 960-1215MHZ
Chip1Stop:
Trans JFET 7.1A GaN HEMT 3-Pin
Verical:
Trans JFET 7.1A GaN HEMT 3-Pin
| 型号 | 品牌 | 下载 |
|---|---|---|
| MAGX-000912-125L00 | M/A-Com | 下载 |
| MAGX-001220-100L00 | M/A-Com | 下载 |
| MAGX-000035-05000P | M/A-Com | 下载 |
| MAGX-001090-600L00 | M/A-Com | 下载 |
| MAGX-001214-500L00 | M/A-Com | 下载 |
| MAGX-000912-500L00 | M/A-Com | 下载 |
| MAGX-001214-650L00 | M/A-Com | 下载 |
| MAGX-011086 | M/A-Com | 下载 |
| MAGX-L20035-015000 | M/A-Com | 下载 |
| MAGX-000035-PB2PPR | M/A-Com | 下载 |
| MAGX-L21214-650L00 | M/A-Com | 下载 |