71V67903S80PFGI8

静态随机存取存储器 9M 3.3V PB静态随机存取存储器 SLOW F/T

* 256K x 36, 512K x 18 memory configurations * Supports fast access times: * 7.5ns up to 117MHz clock frequency * 8.0ns up to 100MHz clock frequency * 8.5ns up to 87MHz clock frequency * 3.3V core power supply * Power down controlled by ZZ input * 3.3V I/O supply VDDQ * Packaged in a JEDEC Standard 100-pin thin plastic quad flatpack TQFP, 119 ball grid array BGA and 165 fine pitch ball grid array fBGA * Green parts available

贸泽:
静态随机存取存储器 9M 3.3V PB静态随机存取存储器 SLOW F/T

安富利:
The IDT71V67903 is a high-speed SRAMs organized as 256Kx 36/512K x 18. The IDT71V67903 SRAMs contain write, data,address and control registers. There are no registers in the data outputpath flow-through architecture. Internal logic allows the SRAM togenerate a self-timed write based upon a decision which can be left untilthe end of the write cycle.The IDT71V67903 SRAMs utilize IDT’s latest high-performanceCMOS process and are packaged in a JEDEC standard 14mm x 20mm100-pin thin plastic quad flatpack TQFP as well as a 119 ball grid arrayBGA and a 165 fine pitch ball grid array fBGA.