高速PT IGBT High Speed PT IGBT
This IGBT transistor from is an electronic switch that can handle large currents with very little gate current drive. Its maximum power dissipation is 195000 mW. It has a maximum collector emitter voltage of 1200 V. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
| 型号 | 品牌 | 下载 |
|---|---|---|
| APT15GN120BDQ1G | Microsemi 美高森美 | 下载 |
| APT100GT120JU2 | Microsemi 美高森美 | 下载 |
| APT15GN120KG | Microsemi 美高森美 | 下载 |
| APT11GF120BRDQ1G | Microsemi 美高森美 | 下载 |
| APT15GT60KRG | Microsemi 美高森美 | 下载 |
| APT15D100KG | Microsemi 美高森美 | 下载 |
| APT15D60KG | Microsemi 美高森美 | 下载 |
| APT15DQ100KG | Microsemi 美高森美 | 下载 |
| APT15D60K | Microsemi 美高森美 | 下载 |
| APT15DQ120KG | Microsemi 美高森美 | 下载 |
| APT15DQ60BG | Microsemi 美高森美 | 下载 |