30V,40A,N沟道MOSFET
**General Description**
The combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDSON. This device is suitable for use as a high side switch in SMPS and general purpose applications.
**Product Summary**
VDS 30V
ID at VGS=10V 40A
RDSON at VGS=10V < 7.5mΩ
RDSON at VGS = 4.5V < 10.5mΩ
100% UIS Tested
100% Rg Tested
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