TEXAS INSTRUMENTS BQ2201SN 芯片, SRAM非易失性控制器, 8-SOIC
General Description
The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory.
A precision comparator monitors the 5V VCCinput for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write protect any standard CMOS SRAM.
Features
➤Power monitoring and switching for 3-volt battery-backup applications
➤Write-protect control
➤3-volt primary cell inputs
➤Less than 10ns chip-enable propagation delay
➤5% or 10% supply operation
型号 | 品牌 | 下载 |
---|---|---|
BQ2201SN | TI 德州仪器 | 下载 |
BQ2205LYPW | TI 德州仪器 | 下载 |
BQ2205LYPWRG4 | TI 德州仪器 | 下载 |
BQ2205LYPWG4 | TI 德州仪器 | 下载 |
BQ2201PN | TI 德州仪器 | 下载 |
BQ2201SN-N | TI 德州仪器 | 下载 |
BQ2201SNTR | TI 德州仪器 | 下载 |
BQ2205LYPWR | TI 德州仪器 | 下载 |
BQ2201SN-NTR | TI 德州仪器 | 下载 |
BQ2201PNE4 | TI 德州仪器 | 下载 |
BQ2201SN-NG4 | TI 德州仪器 | 下载 |